KN2222A DATASHEET PDF

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The KNA is manufactured in a plastic TO case. When looking at the flat side with the leads pointed downward, the three leads emerging from the. KNA from KEC Corporation. Find the PDF Datasheet, Specifications and Distributor Information. KNA datasheet, KNA circuit, KNA data sheet: KEC – EPITAXIAL PLANAR NPN TRANSISTOR,alldatasheet, datasheet, Datasheet search site for .

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The general specifications of the various variants are similar, with the biggest difference being the maximum allowable current and power dissipation.

If you datashwet the collector and emitter of a modern planer BJT transistor, the Beta will be much less and the collector breakdown voltage is now equal to the base-emitter breakdown which is usually only about 5V. All variations have a beta or current gain h fe of at least in optimal conditions. Hence the collector and emitter are not interchangeable.

Therefore, it is important to refer to the datasheet for the exact part number and manufacturer.

It is used in a variety of analog amplification and switching applications. High frequency and microwave engineering.

KNA (KEC) – Epitaxial Planar Npn Transistor (general Purpose, Switching) | eet

Billions of units have been manufactured over the past 45 years and there is continuing high volume annual production. Retrieved from ” https: You May Also Like: It is frequently used as a small-signal transistor, [4] [5] and it remains a small general purpose transistor [6] of enduring popularity.

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JEDEC registered parameters include outline dimensions, small-signal current gaintransition frequencymaximum values for voltage withstand, current rating, power dissipation and temperature rating, and others, measured under standard test conditions.

Nov 4, 2, Sep 22, 3. KNA works reverse bias Reply to Thread. It works this way but when I turn it connect the other way Emitter – Base – Collector it still works. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a kn2222w of variablesactive base width of the transistor.

Sep 23, 9.

KN2222A Datasheet

In way of contrast, unipolar types include the junction-gate and insulatedgateof transistor terms commonly used in Agilent Technologies transistor data sheets, advertisementspotentially ambiguous due to a lack of terminology standardization in the high-frequency transistor area.

Quote of the day. This does not affect your observation but please note that there are two conflicting pin-outs for 2N Sep 22, 6. The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor.

A Page in the History of Transistors: Retrieved 26 March Forward and reverse bias – diode Posted by KevinEamon in forum: The 2N is an NPN transistor that can only switch one-third the current of the 2N but has otherwise similar characteristics.

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Last edited by a moderator: Figure 2techniques and computer-controlled wire bonding of the assembly. The 2N exhibits its forward gain beta peak at a lower current than the 2N, and is useful in amplifier applications with reduced I ce. Replacements for the 2N are commonly available now in the cheaper TO packaging, where it is known as the PN or P2N, which has similar specifications except for the lower maximum collector current.

Sep 22, 2. Ingenuity in Post-War Japan Learn about Japan’s semiconductor journey to dominance in the global electronics industry. Base-emitterTypical Application: I am a little confused.

Since its initial product launch by Motorola at the IRE Convention, the 2N has become the most widely used and universally recognized transistor of all time.

KNA works reverse bias | All About Circuits

But none of them currently have the operating know-how of a small Pittsburgh-based company dtasheet Seegrid. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.

Other part numbers will have different parameters. Transistor Structure Typestransistor action.

The impurity doping concentration profile at the base-emitter junction is different from that of the base-collector junction. In other projects Wikimedia Commons.